PRODUTOS

RD00HHS1 Transistor, Mitsubishi

Mitsubishi

  • RD00HHS1 Transistor, Mitsubishi
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RD00HHS1 Transistor, Mitsubishi

 

RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

DESCRIPTION

RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz

APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.

RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

DESCRIPTION

RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz

APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.

RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

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