PRODUTOS

RD00HVS1 Transistor, Mitsubishi

Mitsubishi

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RD00HVS1 Transistor, Mitsubishi

RD00HVS1-101 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W 

DESCRIPTION

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

FEATURES
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

RD00HVS1-101 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W 

DESCRIPTION

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

FEATURES
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

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