PRODUTOS

RD01MUS1 Transistor, Mitsubishi

Mitsubishi

  • RD01MUS1 Transistor, Mitsubishi
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RD01MUS1 Transistor, Mitsubishi

RD01MUS1-101 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz, 1W

DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

FEATURES
High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

 

RD01MUS1-101 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz, 1W

DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

FEATURES
High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

 

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