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RD01MUS2 Transistor, Mitsubishi

Mitsubishi

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RD01MUS2 Transistor, Mitsubishi

 

RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from
gate to source for ESD protection.

FEATURES
•High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from
gate to source for ESD protection.

FEATURES
•High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)

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