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RD06HVF1 Transistor, 6 watt, 175 MHz, 12.5v, Mitsubishi

Mitsubishi

  • RD06HVF1 Transistor, 6 watt, 175 MHz, 12.5v, Mitsubishi
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RD06HVF1 Transistor, 6 watt, 175 MHz, 12.5v, Mitsubishi

RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz, 6W

DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
This product include the lead in high melting temperature type solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

 

RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz, 6W

DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
This product include the lead in high melting temperature type solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

 

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