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RD09MUP2-501 Transistor, Mitsubishi

Mitsubishi

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RD09MUP2-501 Transistor, Mitsubishi

RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

DESCRIPTION

RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES
•High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.

RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

 

 

RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

DESCRIPTION

RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES
•High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.

RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

 

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