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RD100HHF1 Transistor, 100 watt, 30 MHz, 12.5v, Mitsubishi

Mitsubishi

  • RD100HHF1 Transistor, 100 watt, 30 MHz, 12.5v, Mitsubishi
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RD100HHF1 Transistor, 100 watt, 30 MHz, 12.5v, Mitsubishi

RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W

DESCRIPTION

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

FEATURES
High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band

APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.

RoHS COMPLIANT
RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W

DESCRIPTION

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

FEATURES
High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band

APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.

RoHS COMPLIANT
RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

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