PRODUTOS

RD12MVS1 Transistor, Mitsubishi

Mitsubishi

  • RD12MVS1 Transistor, Mitsubishi
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RD12MVS1 Transistor, Mitsubishi

 

RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz)

APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)

 

RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz)

APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)

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