PRODUTOS

RD20HMF1 Transistor, 20 watt, 900 MHz, 12.5v, Mitsubishi

Mitsubishi

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RD20HMF1 Transistor, 20 watt, 900 MHz, 12.5v, Mitsubishi

RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz, 20W

DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

FEATURES
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.

APPLICATION
For output stage of high power amplifiers in 900MHz band Mobile radio sets.

RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

 

RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz, 20W

DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

FEATURES
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.

APPLICATION
For output stage of high power amplifiers in 900MHz band Mobile radio sets.

RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.

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